why
silicon doped with arsenic forms a p-type semiconductor
silicon
doped with arsenic, arsenic can exist as an atom with valency of 5 or 3, when
it has a valency of 5 it is a
pentavalent element and when used as a doping material for semiconductor it
will produce an n-type semiconductor.
when an atom of arsenic has a valency of 3 ,
it is a trivalent atom and when used as a dopant to make extrinsic semiconductors it creates a
p-type semiconductor.
explain what
happens when germanium doped with antimony n-type or p-type
antimony has
5 electrons in its outermost shell, therefore it is a peentavalent atom. when used as a doping material it will
create an n-type semiconductor because of its excess electrons. therefore the germanium emiconductor will be an n-type .
p-type or n –type when silicon
doped with gallium n-type or p-type
gallium has
3 electron in its outermost electronic shell, it is a trivalent element. when
used as a dopant in a semiconductor it will create a p-type semiconductor,
outermost shell of gallium is almost empty with three electrons seeking 5 to be
complete while silicon has 4 electrons
seeking 4 to be complete with the presence of gallium it will make silicon more
electropositive and hence creating holes.
what
type is produced when silicon doped with boron and phosphorus
silicon
doped with phosphorous will create an n-type
semiconductor . phosphorous is a pentavalent atom and these impurities will
create n-type semiconductor because of
the excess electrons brought about by the phosphorous.
what
happens when germanium doped with indium
indium is a trivalent
atom , the number of electrons in the outermost electron shell is less than
half of the required number for stability. while semiconductor with valence
number of electrons half the required number , therefore when silicon is doped
with a trivalent atom like indium it “ create more emptiness” in the silicon and consequently holes are
created. therefore when silicon is doped with indium a p-type semiconductor is
created.
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